Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

Handle URI:
http://hdl.handle.net/10754/562677
Title:
Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches
Authors:
Molinero, David G.; Luo, Xi; Shen, Chao; Palego, Cristiano; Hwang, James; Goldsmith, Charles L.
Abstract:
This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.
KAUST Department:
Materials Science and Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Transactions on Device and Materials Reliability
Issue Date:
Mar-2013
DOI:
10.1109/TDMR.2013.2246567
Type:
Article
ISSN:
15304388
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorMolinero, David G.en
dc.contributor.authorLuo, Xien
dc.contributor.authorShen, Chaoen
dc.contributor.authorPalego, Cristianoen
dc.contributor.authorHwang, Jamesen
dc.contributor.authorGoldsmith, Charles L.en
dc.date.accessioned2015-08-03T11:01:02Zen
dc.date.available2015-08-03T11:01:02Zen
dc.date.issued2013-03en
dc.identifier.issn15304388en
dc.identifier.doi10.1109/TDMR.2013.2246567en
dc.identifier.urihttp://hdl.handle.net/10754/562677en
dc.description.abstractThis paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectDielectric filmsen
dc.subjectdielectric materialsen
dc.subjectmicroelectromechanical devicesen
dc.subjectmicrowave devicesen
dc.subjectswitchesen
dc.titleLong-term RF burn-in effects on dielectric charging of MEMS capacitive switchesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalIEEE Transactions on Device and Materials Reliabilityen
dc.contributor.institutionLehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionMEMtronics Corporation, Richardson, TX 75081, United Statesen
kaust.authorShen, Chaoen
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