Influence of semiconductor/metal interface geometry in an EMR sensor

Handle URI:
http://hdl.handle.net/10754/562634
Title:
Influence of semiconductor/metal interface geometry in an EMR sensor
Authors:
Sun, Jian; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
The extraordinary magnetoresistance (EMR) is well known to be strongly dependent on geometric parameters. While the influence of the aspect ratios of the metal and semiconductor areas has been thoroughly investigated, the geometry of the semiconductor/metal interface has been neglected so far. However, from a fabrication point of view, this part plays a crucial role. In this paper, the performance of a bar-type hybrid EMR sensor is investigated by means of finite element method and experiments with respect to the hybrid interface geometry. A 3-D model has been developed, which simulates the EMR effect in case of fields in different directions. The semiconductor/metal interface has been investigated in terms of different layer thicknesses and overlaps. The results show that those parameters can cause a change in the output sensitivity of 2%-10%. In order to maintain a high sensitivity and keep the fabrication relatively simple and at low cost, a device with a thin metal shunt having a large overlap on the top of the semiconductor bar would provide the best solution. © 2001-2012 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Sensors Journal
Issue Date:
Feb-2013
DOI:
10.1109/JSEN.2012.2226150
Type:
Article
ISSN:
1530437X
Appears in Collections:
Articles; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-03T10:59:12Zen
dc.date.available2015-08-03T10:59:12Zen
dc.date.issued2013-02en
dc.identifier.issn1530437Xen
dc.identifier.doi10.1109/JSEN.2012.2226150en
dc.identifier.urihttp://hdl.handle.net/10754/562634en
dc.description.abstractThe extraordinary magnetoresistance (EMR) is well known to be strongly dependent on geometric parameters. While the influence of the aspect ratios of the metal and semiconductor areas has been thoroughly investigated, the geometry of the semiconductor/metal interface has been neglected so far. However, from a fabrication point of view, this part plays a crucial role. In this paper, the performance of a bar-type hybrid EMR sensor is investigated by means of finite element method and experiments with respect to the hybrid interface geometry. A 3-D model has been developed, which simulates the EMR effect in case of fields in different directions. The semiconductor/metal interface has been investigated in terms of different layer thicknesses and overlaps. The results show that those parameters can cause a change in the output sensitivity of 2%-10%. In order to maintain a high sensitivity and keep the fabrication relatively simple and at low cost, a device with a thin metal shunt having a large overlap on the top of the semiconductor bar would provide the best solution. © 2001-2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectExtraordinary magnetoresistanceen
dc.subjectfinite element methoden
dc.subjectmagnetic sensorsen
dc.subjectmicrofabricationen
dc.titleInfluence of semiconductor/metal interface geometry in an EMR sensoren
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.identifier.journalIEEE Sensors Journalen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.