Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

Handle URI:
http://hdl.handle.net/10754/562609
Title:
Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices
Authors:
Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry's most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Wiley-VCH Verlag
Journal:
Physica Status Solidi - Rapid Research Letters
Issue Date:
7-Jan-2013
DOI:
10.1002/pssr.201206490
Type:
Article
ISSN:
18626254
Sponsors:
We appreciate the generous baseline funding from KAUST. We also thank the support from the staffs in the KAUST Advanced Nanofabrication Facilities (KANF). We would like to thank Olga Kasimov for the graphic design presented on the back cover.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T10:58:14Zen
dc.date.available2015-08-03T10:58:14Zen
dc.date.issued2013-01-07en
dc.identifier.issn18626254en
dc.identifier.doi10.1002/pssr.201206490en
dc.identifier.urihttp://hdl.handle.net/10754/562609en
dc.description.abstractCan we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry's most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipWe appreciate the generous baseline funding from KAUST. We also thank the support from the staffs in the KAUST Advanced Nanofabrication Facilities (KANF). We would like to thank Olga Kasimov for the graphic design presented on the back cover.en
dc.publisherWiley-VCH Verlagen
dc.subjectFlexible electronicsen
dc.subjectHigh-k materialsen
dc.subjectMetal gatesen
dc.subjectMOS capacitorsen
dc.subjectSiliconen
dc.titleFlexible semi-transparent silicon (100) fabric with high-k/metal gate devicesen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalPhysica Status Solidi - Rapid Research Lettersen
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Muhammad Mustafaen
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