Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

Handle URI:
http://hdl.handle.net/10754/562575
Title:
Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors
Authors:
Mejia, Israel I.; Salas Villaseñor, Ana L.; Cha, Dong Kyu; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Gnade, Bruce E.; Quevedo-López, Manuel Angel Quevedo
Abstract:
We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Transactions on Electron Devices
Issue Date:
Jan-2013
DOI:
10.1109/TED.2012.2228200
Type:
Article
ISSN:
00189383
Sponsors:
This work was supported in part by the CONACyT, by the Air Force Office of Sponsored Research, and by the Army Research Laboratory. The review of this paper was arranged by Editor H.-S. Tae.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorMejia, Israel I.en
dc.contributor.authorSalas Villaseñor, Ana L.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorGnade, Bruce E.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.date.accessioned2015-08-03T10:43:23Zen
dc.date.available2015-08-03T10:43:23Zen
dc.date.issued2013-01en
dc.identifier.issn00189383en
dc.identifier.doi10.1109/TED.2012.2228200en
dc.identifier.urihttp://hdl.handle.net/10754/562575en
dc.description.abstractWe report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.en
dc.description.sponsorshipThis work was supported in part by the CONACyT, by the Air Force Office of Sponsored Research, and by the Army Research Laboratory. The review of this paper was arranged by Editor H.-S. Tae.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectCadmium sulfide (CdS)en
dc.subjectcontact resistanceen
dc.subjecthigh mobilityen
dc.subjectphotolithographyen
dc.subjectthin-film transistor (TFT)en
dc.titleFabrication and characterization of high-mobility solution-based chalcogenide thin-film transistorsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalIEEE Transactions on Electron Devicesen
dc.contributor.institutionDepartment of Material Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United Statesen
kaust.authorCha, Dong Kyuen
kaust.authorAlshareef, Husam N.en
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