Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

Handle URI:
http://hdl.handle.net/10754/562528
Title:
Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition
Authors:
Cheng, Yingchun; Yao, Kexin; Yang, Yang; LI, LIANG; Yao, Yingbang; Wang, Qingxiao; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Han, Yu ( 0000-0003-1462-1118 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Advanced Membranes and Porous Materials Research Center; Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Chemical Science Program; Core Labs; Nanostructured Functional Materials (NFM) laboratory; Computational Physics and Materials Science (CPMS)
Publisher:
Royal Society of Chemistry
Journal:
RSC Advances
Issue Date:
2013
DOI:
10.1039/c3ra42171f
Type:
Article
ISSN:
20462069
Appears in Collections:
Articles; Advanced Membranes and Porous Materials Research Center; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Chemical Science Program; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorYao, Kexinen
dc.contributor.authorYang, Yangen
dc.contributor.authorLI, LIANGen
dc.contributor.authorYao, Yingbangen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorHan, Yuen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-03T10:41:29Zen
dc.date.available2015-08-03T10:41:29Zen
dc.date.issued2013en
dc.identifier.issn20462069en
dc.identifier.doi10.1039/c3ra42171fen
dc.identifier.urihttp://hdl.handle.net/10754/562528en
dc.description.abstractRecently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.en
dc.publisherRoyal Society of Chemistryen
dc.titleVan der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor depositionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Centeren
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentChemical Science Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratoryen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalRSC Advancesen
kaust.authorCheng, Yingchunen
kaust.authorYao, Kexinen
kaust.authorYang, Yangen
kaust.authorLI, LIANGen
kaust.authorYao, Yingbangen
kaust.authorWang, Qingxiaoen
kaust.authorZhang, Xixiangen
kaust.authorHan, Yuen
kaust.authorSchwingenschlögl, Udoen
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