Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

Handle URI:
http://hdl.handle.net/10754/562515
Title:
Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films
Authors:
Barasheed, Abeer Z.; Sarath Kumar, S. R.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Royal Society of Chemistry
Journal:
Journal of Materials Chemistry C
Issue Date:
2013
DOI:
10.1039/c3tc30215f
Type:
Article
ISSN:
20507534
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorBarasheed, Abeer Z.en
dc.contributor.authorSarath Kumar, S. R.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T10:40:59Zen
dc.date.available2015-08-03T10:40:59Zen
dc.date.issued2013en
dc.identifier.issn20507534en
dc.identifier.doi10.1039/c3tc30215fen
dc.identifier.urihttp://hdl.handle.net/10754/562515en
dc.description.abstractIn this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.en
dc.publisherRoyal Society of Chemistryen
dc.titleTemperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin filmsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalJournal of Materials Chemistry Cen
kaust.authorAlshareef, Husam N.en
kaust.authorBarasheed, Abeer Z.en
kaust.authorSarath Kumar, S. R.en
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