Thermal oxidation of Ni films for p-type thin-film transistors

Handle URI:
http://hdl.handle.net/10754/562492
Title:
Thermal oxidation of Ni films for p-type thin-film transistors
Authors:
Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Physical Chemistry Chemical Physics
Issue Date:
2013
DOI:
10.1039/c3cp50197c
Type:
Article
ISSN:
14639076
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorJiang, Jieen
dc.contributor.authorWang, Xinghuien
dc.contributor.authorZhang, Qingen
dc.contributor.authorLi, Jingqien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T10:40:05Zen
dc.date.available2015-08-03T10:40:05Zen
dc.date.issued2013en
dc.identifier.issn14639076en
dc.identifier.doi10.1039/c3cp50197cen
dc.identifier.urihttp://hdl.handle.net/10754/562492en
dc.description.abstractp-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleThermal oxidation of Ni films for p-type thin-film transistorsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.identifier.journalPhysical Chemistry Chemical Physicsen
dc.contributor.institutionNOVITAS, Nanoelectronics Centre of Excellence, Nanyang Technological University, Singapore 639798, Singaporeen
kaust.authorLi, Jingqien
kaust.authorZhang, Xixiangen
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