Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

Handle URI:
http://hdl.handle.net/10754/562491
Title:
Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature
Authors:
Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui ( 0000-0001-9348-7943 ) ; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram ( 0000-0002-5734-1194 ) ; Anthopoulos, Thomas D.
Abstract:
The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Organic Electronics and Photovoltaics Group
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Chem. Commun.
Issue Date:
2013
DOI:
10.1039/c2cc37065d
Type:
Article
ISSN:
13597345
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorPattanasattayavong, Pichayaen
dc.contributor.authorNdjawa, Guy Olivier Ngongangen
dc.contributor.authorZhao, Kuien
dc.contributor.authorChou, Kang Weien
dc.contributor.authorYaacobi-Gross, Niren
dc.contributor.authorO'Regan, Brian C.en
dc.contributor.authorAmassian, Aramen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2015-08-03T10:40:03Zen
dc.date.available2015-08-03T10:40:03Zen
dc.date.issued2013en
dc.identifier.issn13597345en
dc.identifier.doi10.1039/c2cc37065den
dc.identifier.urihttp://hdl.handle.net/10754/562491en
dc.description.abstractThe optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleElectric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperatureen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalChem. Commun.en
dc.contributor.institutionDepartment of Physics, Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Chemistry, Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdomen
kaust.authorZhao, Kuien
kaust.authorChou, Kang Weien
kaust.authorAmassian, Aramen
kaust.authorNdjawa, Guy Olivier Ngongangen
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