Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors

Handle URI:
http://hdl.handle.net/10754/562481
Title:
Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors
Authors:
Li, Jingqi; Cheng, Yingchun; Guo, Zaibing; Wang, Zhihong; Zhu, Zhiyong; Zhang, Qing; Chan-Park, Chanpark; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs; Computational Physics and Materials Science (CPMS)
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale
Issue Date:
2013
DOI:
10.1039/c3nr33263b
Type:
Article
ISSN:
20403364
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Jingqien
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorWang, Zhihongen
dc.contributor.authorZhu, Zhiyongen
dc.contributor.authorZhang, Qingen
dc.contributor.authorChan-Park, Chanparken
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T10:39:44Zen
dc.date.available2015-08-03T10:39:44Zen
dc.date.issued2013en
dc.identifier.issn20403364en
dc.identifier.doi10.1039/c3nr33263ben
dc.identifier.urihttp://hdl.handle.net/10754/562481en
dc.description.abstractVertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleInfluence of contact height on the performance of vertically aligned carbon nanotube field-effect transistorsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalNanoscaleen
dc.contributor.institutionSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singaporeen
dc.contributor.institutionSchool of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, Singapore 637459, Singaporeen
kaust.authorLi, Jingqien
kaust.authorCheng, Yingchunen
kaust.authorGuo, Zaibingen
kaust.authorWang, Zhihongen
kaust.authorZhu, Zhiyongen
kaust.authorSchwingenschlögl, Udoen
kaust.authorZhang, Xixiangen
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