Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

Handle URI:
http://hdl.handle.net/10754/562472
Title:
Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films
Authors:
Yao, Yingbang; Zhang, Bei; Chen, Long; Yang, Yang; Wang, Zhihong; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
IOP Publishing
Journal:
Journal of Physics D: Applied Physics
Issue Date:
28-Dec-2012
DOI:
10.1088/0022-3727/46/5/055304
Type:
Article
ISSN:
00223727
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorYao, Yingbangen
dc.contributor.authorZhang, Beien
dc.contributor.authorChen, Longen
dc.contributor.authorYang, Yangen
dc.contributor.authorWang, Zhihongen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T10:39:27Zen
dc.date.available2015-08-03T10:39:27Zen
dc.date.issued2012-12-28en
dc.identifier.issn00223727en
dc.identifier.doi10.1088/0022-3727/46/5/055304en
dc.identifier.urihttp://hdl.handle.net/10754/562472en
dc.description.abstractAsymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.en
dc.publisherIOP Publishingen
dc.titlePolarization-tuned diode behaviour in multiferroic BiFeO3 thin filmsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalJournal of Physics D: Applied Physicsen
kaust.authorYao, Yingbangen
kaust.authorZhang, Beien
kaust.authorChen, Longen
kaust.authorYang, Yangen
kaust.authorWang, Zhihongen
kaust.authorAlshareef, Husam N.en
kaust.authorZhang, Xixiangen
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