Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Handle URI:
http://hdl.handle.net/10754/562471
Title:
Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature
Authors:
Pattanasattayavong, Pichaya; Yaacobi-Gross, Nir; Zhao, Kui ( 0000-0001-9348-7943 ) ; Ndjawa, Guy Olivier Ngongang; Li, Jinhua; Yan, Feng; O'Regan, Brian C.; Amassian, Aram ( 0000-0002-5734-1194 ) ; Anthopoulos, Thomas D.
Abstract:
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Organic Electronics and Photovoltaics Group
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
27-Dec-2012
DOI:
10.1002/adma.201202758
PubMed ID:
23280854
Type:
Article
ISSN:
09359648
Sponsors:
P.P. and T. D. A. are grateful to Cambridge Display Technology (CDT), the Anandamahidol Foundation, Thailand, Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/J001473/1 and European Research Council (ERC) AMPRO project no. 280221 for financial support.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorPattanasattayavong, Pichayaen
dc.contributor.authorYaacobi-Gross, Niren
dc.contributor.authorZhao, Kuien
dc.contributor.authorNdjawa, Guy Olivier Ngongangen
dc.contributor.authorLi, Jinhuaen
dc.contributor.authorYan, Fengen
dc.contributor.authorO'Regan, Brian C.en
dc.contributor.authorAmassian, Aramen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2015-08-03T10:39:25Zen
dc.date.available2015-08-03T10:39:25Zen
dc.date.issued2012-12-27en
dc.identifier.issn09359648en
dc.identifier.pmid23280854en
dc.identifier.doi10.1002/adma.201202758en
dc.identifier.urihttp://hdl.handle.net/10754/562471en
dc.description.abstractThe wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipP.P. and T. D. A. are grateful to Cambridge Display Technology (CDT), the Anandamahidol Foundation, Thailand, Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/J001473/1 and European Research Council (ERC) AMPRO project no. 280221 for financial support.en
dc.publisherWiley-Blackwellen
dc.subjectcopper thiocyanateen
dc.subjectsolution processingen
dc.subjecttransparent transistorsen
dc.subjectwide-bandgap p-type semiconductorsen
dc.titleHole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperatureen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionCentre for Plastic Electronics, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Applied Physics, Materials Research Centre, Hong Kong Polytechnic University, Hong Kong, Hong Kongen
dc.contributor.institutionCentre for Plastic Electronics, Department of Chemistry, Imperial College London, London SW7 2AZ, United Kingdomen
kaust.authorZhao, Kuien
kaust.authorAmassian, Aramen
kaust.authorNdjawa, Guy Olivier Ngongangen

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