All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

Handle URI:
http://hdl.handle.net/10754/562420
Title:
All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends
Authors:
Khan, Mohammad A.; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
21-Nov-2012
DOI:
10.1002/adfm.201202724
Type:
Article
ISSN:
1616301X
Sponsors:
The authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammad A.en
dc.contributor.authorBhansali, Unnat Sampatrajen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T10:37:33Zen
dc.date.available2015-08-03T10:37:33Zen
dc.date.issued2012-11-21en
dc.identifier.issn1616301Xen
dc.identifier.doi10.1002/adfm.201202724en
dc.identifier.urihttp://hdl.handle.net/10754/562420en
dc.description.abstractAll polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThe authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.en
dc.publisherWiley-Blackwellen
dc.subjectblenden
dc.subjectferroelectricen
dc.subjectmemoryen
dc.subjectPCBMen
dc.subjectpolymeren
dc.titleAll-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blendsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalAdvanced Functional Materialsen
kaust.authorBhansali, Unnat Sampatrajen
kaust.authorCha, Dong Kyuen
kaust.authorAlshareef, Husam N.en
kaust.authorKhan, Mohammad A.en
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