Vertically aligned carbon nanotube field-effect transistors

Handle URI:
http://hdl.handle.net/10754/562335
Title:
Vertically aligned carbon nanotube field-effect transistors
Authors:
Li, Jingqi; Zhao, Chao ( 0000-0002-9582-1068 ) ; Wang, Qingxiao; Zhang, Qiang; Wang, Zhihong; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Abutaha, Anas I. ( 0000-0002-8923-5417 ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
Elsevier BV
Journal:
Carbon
Issue Date:
Oct-2012
DOI:
10.1016/j.carbon.2012.05.049
Type:
Article
ISSN:
00086223
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Jingqien
dc.contributor.authorZhao, Chaoen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorWang, Zhihongen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorAbutaha, Anas I.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T10:01:22Zen
dc.date.available2015-08-03T10:01:22Zen
dc.date.issued2012-10en
dc.identifier.issn00086223en
dc.identifier.doi10.1016/j.carbon.2012.05.049en
dc.identifier.urihttp://hdl.handle.net/10754/562335en
dc.description.abstractVertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.en
dc.publisherElsevier BVen
dc.titleVertically aligned carbon nanotube field-effect transistorsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalCarbonen
kaust.authorLi, Jingqien
kaust.authorZhao, Chaoen
kaust.authorWang, Qingxiaoen
kaust.authorZhang, Qiangen
kaust.authorWang, Zhihongen
kaust.authorZhang, Xixiangen
kaust.authorAbutaha, Anas I.en
kaust.authorAlshareef, Husam N.en
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