Contact engineering for nano-scale CMOS

Handle URI:
http://hdl.handle.net/10754/562324
Title:
Contact engineering for nano-scale CMOS
Authors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Fahad, Hossain M.; Qaisi, Ramy M. ( 0000-0003-0968-5483 )
Abstract:
High performance computation with longer battery lifetime is an essential component in our today's digital electronics oriented life. To achieve these goals, field effect transistors based complementary metal oxide semiconductor play the key role. One of the critical requirements of transistor structure and fabrication is efficient contact engineering. To catch up with high performance information processing, transistors are going through continuous scaling process. However, it also imposes new challenges to integrate good contact materials in a small area. This can be counterproductive as smaller area results in higher contact resistance thus reduced performance for the transistor itself. At the same time, discovery of new one or two-dimensional materials like nanowire, nanotube, or atomic crystal structure materials, introduces new set of challenges and opportunities. In this paper, we are reviewing them in a synchronized fashion: fundamentals of contact engineering, evolution into non-planar field effect transistors, opportunities and challenges with one and two-dimensional materials and a new opportunity of contact engineering from device architecture perspective. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (a)
Issue Date:
10-Sep-2012
DOI:
10.1002/pssa.201200343
Type:
Article
ISSN:
18626300
Sponsors:
We deeply appreciate the generous research grants provided by King Abdullah University of Science and Technology.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorQaisi, Ramy M.en
dc.date.accessioned2015-08-03T10:00:55Zen
dc.date.available2015-08-03T10:00:55Zen
dc.date.issued2012-09-10en
dc.identifier.issn18626300en
dc.identifier.doi10.1002/pssa.201200343en
dc.identifier.urihttp://hdl.handle.net/10754/562324en
dc.description.abstractHigh performance computation with longer battery lifetime is an essential component in our today's digital electronics oriented life. To achieve these goals, field effect transistors based complementary metal oxide semiconductor play the key role. One of the critical requirements of transistor structure and fabrication is efficient contact engineering. To catch up with high performance information processing, transistors are going through continuous scaling process. However, it also imposes new challenges to integrate good contact materials in a small area. This can be counterproductive as smaller area results in higher contact resistance thus reduced performance for the transistor itself. At the same time, discovery of new one or two-dimensional materials like nanowire, nanotube, or atomic crystal structure materials, introduces new set of challenges and opportunities. In this paper, we are reviewing them in a synchronized fashion: fundamentals of contact engineering, evolution into non-planar field effect transistors, opportunities and challenges with one and two-dimensional materials and a new opportunity of contact engineering from device architecture perspective. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipWe deeply appreciate the generous research grants provided by King Abdullah University of Science and Technology.en
dc.publisherWiley-Blackwellen
dc.subjectcontact resistanceen
dc.subjectfield effect transistoren
dc.subjectnano-devicesen
dc.subjectnanotubeen
dc.subjectnanowireen
dc.titleContact engineering for nano-scale CMOSen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalphysica status solidi (a)en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorFahad, Hossain M.en
kaust.authorQaisi, Ramy M.en
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