Heterogeneous nucleation promotes carrier transport in solution-processed organic field-effect transistors

Handle URI:
http://hdl.handle.net/10754/562318
Title:
Heterogeneous nucleation promotes carrier transport in solution-processed organic field-effect transistors
Authors:
Li, Ruipeng; Khan, Hadayat Ullah; Payne, Marcia M.; Smilgies, Detlef Matthias; Anthony, John Edward; Amassian, Aram ( 0000-0002-5734-1194 )
Abstract:
A new way to investigate and control the growth of solution-cast thin films is presented. The combination of in situ quartz crystal microbalance measurements with dissipation capabilities (QCM-D) and in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) in an environmental chamber provides unique quantitative insights into the time-evolution of the concentration of the solution, the onset of nucleation, and the mode of growth of the organic semiconductor under varied drying conditions. It is demonstrated that careful control over the kinetics of solution drying enhances carrier transport significantly by promoting phase transformation predominantly via heterogeneous nucleation and sustained surface growth of a highly lamellar structure at the solid-liquid interface at the expense of homogeneous nucleation. A new way to investigate and control the growth of drop-cast thin films is presented. The solution-processing of small-molecule thin films of TIPS-pentacene is investigated using time-resolved techniques to reveal the mechanisms of nucleation and growth leading to solid film formation. By tuning the drying speed of the solution, the balance between surface and bulk growth modes is altered, thereby controlling the lamellar formation and tuning the carrier mobility in organic field-effect transistors Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Organic Electronics and Photovoltaics Group
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
4-Sep-2012
DOI:
10.1002/adfm.201201264
Type:
Article
ISSN:
1616301X
Sponsors:
The authors are grateful to Mr. Mohammed Balamesh for his important contributions to the operational readiness of the Organic Electronics and Photovoltaics Laboratory at King Abdullah University of Science and Technology, where most of this work was performed. Part of this work was supported by KAUST's Office of Competitive Research Funds under award number FIC/2010/04. The authors acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Ruipengen
dc.contributor.authorKhan, Hadayat Ullahen
dc.contributor.authorPayne, Marcia M.en
dc.contributor.authorSmilgies, Detlef Matthiasen
dc.contributor.authorAnthony, John Edwarden
dc.contributor.authorAmassian, Aramen
dc.date.accessioned2015-08-03T10:00:39Zen
dc.date.available2015-08-03T10:00:39Zen
dc.date.issued2012-09-04en
dc.identifier.issn1616301Xen
dc.identifier.doi10.1002/adfm.201201264en
dc.identifier.urihttp://hdl.handle.net/10754/562318en
dc.description.abstractA new way to investigate and control the growth of solution-cast thin films is presented. The combination of in situ quartz crystal microbalance measurements with dissipation capabilities (QCM-D) and in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) in an environmental chamber provides unique quantitative insights into the time-evolution of the concentration of the solution, the onset of nucleation, and the mode of growth of the organic semiconductor under varied drying conditions. It is demonstrated that careful control over the kinetics of solution drying enhances carrier transport significantly by promoting phase transformation predominantly via heterogeneous nucleation and sustained surface growth of a highly lamellar structure at the solid-liquid interface at the expense of homogeneous nucleation. A new way to investigate and control the growth of drop-cast thin films is presented. The solution-processing of small-molecule thin films of TIPS-pentacene is investigated using time-resolved techniques to reveal the mechanisms of nucleation and growth leading to solid film formation. By tuning the drying speed of the solution, the balance between surface and bulk growth modes is altered, thereby controlling the lamellar formation and tuning the carrier mobility in organic field-effect transistors Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThe authors are grateful to Mr. Mohammed Balamesh for his important contributions to the operational readiness of the Organic Electronics and Photovoltaics Laboratory at King Abdullah University of Science and Technology, where most of this work was performed. Part of this work was supported by KAUST's Office of Competitive Research Funds under award number FIC/2010/04. The authors acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS.en
dc.publisherWiley-Blackwellen
dc.subjectAvrami modelen
dc.subjectin situ characterizationen
dc.subjectorganic field-effect transistorsen
dc.subjectsolution processingen
dc.subjectthin-film growthen
dc.titleHeterogeneous nucleation promotes carrier transport in solution-processed organic field-effect transistorsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionCornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850, United Statesen
dc.contributor.institutionDepartment of Chemistry, University of Kentucky, Lexington, KY 40506, United Statesen
kaust.authorLi, Ruipengen
kaust.authorKhan, Hadayat Ullahen
kaust.authorAmassian, Aramen
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