Ge-intercalated graphene: The origin of the p-type to n-type transition

Handle URI:
http://hdl.handle.net/10754/562314
Title:
Ge-intercalated graphene: The origin of the p-type to n-type transition
Authors:
Kaloni, Thaneshwor P.; Kahaly, M. Upadhyay; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)
Publisher:
IOP Publishing
Journal:
EPL (Europhysics Letters)
Issue Date:
1-Sep-2012
DOI:
10.1209/0295-5075/99/57002
Type:
Article
ISSN:
02955075
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorKaloni, Thaneshwor P.en
dc.contributor.authorKahaly, M. Upadhyayen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-03T10:00:30Zen
dc.date.available2015-08-03T10:00:30Zen
dc.date.issued2012-09-01en
dc.identifier.issn02955075en
dc.identifier.doi10.1209/0295-5075/99/57002en
dc.identifier.urihttp://hdl.handle.net/10754/562314en
dc.description.abstractRecently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.en
dc.publisherIOP Publishingen
dc.titleGe-intercalated graphene: The origin of the p-type to n-type transitionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalEPL (Europhysics Letters)en
kaust.authorKaloni, Thaneshwor P.en
kaust.authorKahaly, M. Upadhyayen
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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