Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films

Handle URI:
http://hdl.handle.net/10754/562169
Title:
Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films
Authors:
Duan, Xiaofei; Mi, Wenbo; Guo, Zaibing; Bai, Haili
Abstract:
Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KAUST Department:
Core Labs
Publisher:
Elsevier
Journal:
Acta Materialia
Issue Date:
May-2012
DOI:
10.1016/j.actamat.2012.03.043
Type:
Article
ISSN:
13596454
Sponsors:
This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorDuan, Xiaofeien
dc.contributor.authorMi, Wenboen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorBai, Hailien
dc.date.accessioned2015-08-03T09:46:22Zen
dc.date.available2015-08-03T09:46:22Zen
dc.date.issued2012-05en
dc.identifier.issn13596454en
dc.identifier.doi10.1016/j.actamat.2012.03.043en
dc.identifier.urihttp://hdl.handle.net/10754/562169en
dc.description.abstractReactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).en
dc.publisherElsevieren
dc.subjectElectrical propertiesen
dc.subjectMagnetic thin filmsen
dc.subjectMagnetoresistanceen
dc.subjectNitridesen
dc.subjectSputteringen
dc.titleMagnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN filmsen
dc.typeArticleen
dc.contributor.departmentCore Labsen
dc.identifier.journalActa Materialiaen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, Chinaen
kaust.authorGuo, Zaibingen
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