Strain-induced changes to the electronic structure of germanium

Handle URI:
http://hdl.handle.net/10754/562156
Title:
Strain-induced changes to the electronic structure of germanium
Authors:
Tahini, H. A.; Chroneos, Alexander I.; Grimes, Robin W.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Dimoulas, Athanasios Dimoulas
Abstract:
Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)
Publisher:
IOP Publishing
Journal:
Journal of Physics: Condensed Matter
Issue Date:
17-Apr-2012
DOI:
10.1088/0953-8984/24/19/195802
Type:
Article
ISSN:
09538984
Sponsors:
This publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorTahini, H. A.en
dc.contributor.authorChroneos, Alexander I.en
dc.contributor.authorGrimes, Robin W.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorDimoulas, Athanasios Dimoulasen
dc.date.accessioned2015-08-03T09:46:05Zen
dc.date.available2015-08-03T09:46:05Zen
dc.date.issued2012-04-17en
dc.identifier.issn09538984en
dc.identifier.doi10.1088/0953-8984/24/19/195802en
dc.identifier.urihttp://hdl.handle.net/10754/562156en
dc.description.abstractDensity functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.en
dc.description.sponsorshipThis publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.en
dc.publisherIOP Publishingen
dc.titleStrain-induced changes to the electronic structure of germaniumen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Physics: Condensed Matteren
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionMBE Laboratory, Institute of Materials Science, NCSR Demokritos, GR-15310 Athens, Greeceen
kaust.authorSchwingenschlögl, Udoen
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