Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs

Handle URI:
http://hdl.handle.net/10754/562153
Title:
Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs
Authors:
Smith, Jeremy N.; Zhang, Weimin; Sougrat, Rachid; Zhao, Kui ( 0000-0001-9348-7943 ) ; Li, Ruipeng; Cha, Dong Kyu; Amassian, Aram ( 0000-0002-5734-1194 ) ; Heeney, Martin J.; McCulloch, Iain A.; Anthopoulos, Thomas D.
Abstract:
Using phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Core Labs; Organic Electronics and Photovoltaics Group
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
10-Apr-2012
DOI:
10.1002/adma.201200088
PubMed ID:
22488874
Type:
Article
ISSN:
09359648
Sponsors:
This work was funded by the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/E02730X, Research Councils UK (RCUK) and by King Abdullah University of Science and Technology (KAUST). We acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS. T.D.A. is an EPSRC Advanced Fellow and a RCUK Fellow/Lecturer.
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorSmith, Jeremy N.en
dc.contributor.authorZhang, Weiminen
dc.contributor.authorSougrat, Rachiden
dc.contributor.authorZhao, Kuien
dc.contributor.authorLi, Ruipengen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAmassian, Aramen
dc.contributor.authorHeeney, Martin J.en
dc.contributor.authorMcCulloch, Iain A.en
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2015-08-03T09:46:01Zen
dc.date.available2015-08-03T09:46:01Zen
dc.date.issued2012-04-10en
dc.identifier.issn09359648en
dc.identifier.pmid22488874en
dc.identifier.doi10.1002/adma.201200088en
dc.identifier.urihttp://hdl.handle.net/10754/562153en
dc.description.abstractUsing phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThis work was funded by the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/E02730X, Research Councils UK (RCUK) and by King Abdullah University of Science and Technology (KAUST). We acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS. T.D.A. is an EPSRC Advanced Fellow and a RCUK Fellow/Lecturer.en
dc.publisherWiley-Blackwellen
dc.subjectblend organic semiconductorsen
dc.subjectorganic field-effect transistorsen
dc.subjectorganic semiconductorsen
dc.titleSolution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentCore Labsen
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2BW, United Kingdomen
dc.contributor.institutionCentre for Plastic Electronics, Department of Chemistry, Imperial College London, London SW7 2AZ, United Kingdomen
kaust.authorSougrat, Rachiden
kaust.authorZhao, Kuien
kaust.authorLi, Ruipengen
kaust.authorCha, Dong Kyuen
kaust.authorAmassian, Aramen

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