A quantitative correlation between the mobility and crystallinity of photo-cross-linkable P3HT

Handle URI:
http://hdl.handle.net/10754/562152
Title:
A quantitative correlation between the mobility and crystallinity of photo-cross-linkable P3HT
Authors:
Woo, Claire; Piliego, Claudia; Holcombe, Thomas W.; Toney, Michael F.; Frechet, Jean ( 0000-0001-6419-0163 )
Abstract:
The performance of polymer field effect transistors (FETs) can vary by orders of magnitude by applying different processing conditions. Although it is generally believed that a higher degree of crystallinity results in a higher mobility, the correlation is not straightforward. In addition, the effect of cross-linking on polymer thin film microstructural order is relatively unknown. This study investigates the effect of thermal annealing and UV-initiated photo-cross-linking on the FET performance and microstructural order of a photo-cross-linkable P3HT derivative. Our results demonstrate that while cross-linking did not disrupt the overall crystallinity of the polymer thin film, the photo-cross-linking process likely induced doping in the semiconductor layer, leading to the absence of saturation behavior in the FET. Annealing after cross-linking slightly improved the FET performance but only minimally affected the microstructural order of the polymer film since the 3D morphology had been "locked in" during the first cross-linking step. Importantly, annealing and cross-linking simultaneously was a successful method to preserve polymer crystallinity while also achieving effective cross-linking. Using newly developed quantitative X-ray analysis techniques, our study established a quantitative correlation between FET charge mobility and thin film crystallinity. © 2012 American Chemical Society.
KAUST Department:
Chemical Science Program; Physical Sciences and Engineering (PSE) Division
Publisher:
American Chemical Society (ACS)
Journal:
Macromolecules
Issue Date:
10-Apr-2012
DOI:
10.1021/ma202203z
Type:
Article
ISSN:
00249297
Sponsors:
The authors acknowledge financial support by the U.S. Department of Energy, Basic Energy Sciences, under Contract DE-AC03-76SF00098. Partial support from the Frechet "other donors" fund is also acknowledged. C.H.W. and T.W.H. thank the National Science Foundation for Graduate Research Fellowships. Portions of this research were carried out at the Stanford Synchrotron Radiation Laboratory, a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences. The authors also thank Leslie Jimison and Jonathan Rivnay for helpful discussions.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Chemical Science Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWoo, Claireen
dc.contributor.authorPiliego, Claudiaen
dc.contributor.authorHolcombe, Thomas W.en
dc.contributor.authorToney, Michael F.en
dc.contributor.authorFrechet, Jeanen
dc.date.accessioned2015-08-03T09:46:00Zen
dc.date.available2015-08-03T09:46:00Zen
dc.date.issued2012-04-10en
dc.identifier.issn00249297en
dc.identifier.doi10.1021/ma202203zen
dc.identifier.urihttp://hdl.handle.net/10754/562152en
dc.description.abstractThe performance of polymer field effect transistors (FETs) can vary by orders of magnitude by applying different processing conditions. Although it is generally believed that a higher degree of crystallinity results in a higher mobility, the correlation is not straightforward. In addition, the effect of cross-linking on polymer thin film microstructural order is relatively unknown. This study investigates the effect of thermal annealing and UV-initiated photo-cross-linking on the FET performance and microstructural order of a photo-cross-linkable P3HT derivative. Our results demonstrate that while cross-linking did not disrupt the overall crystallinity of the polymer thin film, the photo-cross-linking process likely induced doping in the semiconductor layer, leading to the absence of saturation behavior in the FET. Annealing after cross-linking slightly improved the FET performance but only minimally affected the microstructural order of the polymer film since the 3D morphology had been "locked in" during the first cross-linking step. Importantly, annealing and cross-linking simultaneously was a successful method to preserve polymer crystallinity while also achieving effective cross-linking. Using newly developed quantitative X-ray analysis techniques, our study established a quantitative correlation between FET charge mobility and thin film crystallinity. © 2012 American Chemical Society.en
dc.description.sponsorshipThe authors acknowledge financial support by the U.S. Department of Energy, Basic Energy Sciences, under Contract DE-AC03-76SF00098. Partial support from the Frechet "other donors" fund is also acknowledged. C.H.W. and T.W.H. thank the National Science Foundation for Graduate Research Fellowships. Portions of this research were carried out at the Stanford Synchrotron Radiation Laboratory, a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences. The authors also thank Leslie Jimison and Jonathan Rivnay for helpful discussions.en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleA quantitative correlation between the mobility and crystallinity of photo-cross-linkable P3HTen
dc.typeArticleen
dc.contributor.departmentChemical Science Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalMacromoleculesen
dc.contributor.institutionDepartment of Chemical and Biomolecular Engineering, University of California, Berkeley, Berkeley, CA 94720, United Statesen
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United Statesen
dc.contributor.institutionDepartment of Chemistry, University of California, Berkeley, Berkeley, CA 94720, United Statesen
dc.contributor.institutionStanford Synchrotron Radiation Lightsource, Menlo Park, CA 94205, United Statesen
kaust.authorFrechet, Jeanen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.