Ultra low power CMOS-based sensor for on-body radiation dose measurements

Handle URI:
http://hdl.handle.net/10754/562119
Title:
Ultra low power CMOS-based sensor for on-body radiation dose measurements
Authors:
Arsalan, Muhammad; Shamim, Atif ( 0000-0002-4207-4740 ) ; Shams, Maitham; Tarr, Nathan Garry; Roy, Langis
Abstract:
For the first time, a dosimeter employing two floating gate radiation field effect transistors (FGRADFET) and operating at mere 0.1 V is presented. The novel dosimeter requires no power during irradiation and consumes only 1 μ Wduring readout. Besides the low power operation, structural changes at the device level have enhanced the sensitivity of the dosimeter considerably as compared to previous designs. The dosimeter is integrated with a wireless transmitter chip, thus eliminating all unwanted communication and power cables. It has been realized monolithically in DALSA's 0.8 μ m complementary metal-oxide-semiconductor process and characterized with X-ray and γ-ray sources. A maximum sensitivity of 5 mV/rad for X-rays and 1.1 mV/rad for gamma;-rays have been achieved in measurements. Due to its small size, low-power, and wireless operation, the design is highly suitable for miniaturized, wearable, and battery operated dosimeters intended for radiotherapy and space applications. © 2012 IEEE.
KAUST Department:
Electrical Engineering Program; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Integrated Microwave Packaging Antennas and Circuits Technology (IMPACT) Lab
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Issue Date:
Mar-2012
DOI:
10.1109/JETCAS.2012.2187404
Type:
Article
ISSN:
21563357
Appears in Collections:
Articles; Integrated Microwave Packaging Antennas and Circuits Technology (IMPACT) Lab; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorArsalan, Muhammaden
dc.contributor.authorShamim, Atifen
dc.contributor.authorShams, Maithamen
dc.contributor.authorTarr, Nathan Garryen
dc.contributor.authorRoy, Langisen
dc.date.accessioned2015-08-03T09:45:14Zen
dc.date.available2015-08-03T09:45:14Zen
dc.date.issued2012-03en
dc.identifier.issn21563357en
dc.identifier.doi10.1109/JETCAS.2012.2187404en
dc.identifier.urihttp://hdl.handle.net/10754/562119en
dc.description.abstractFor the first time, a dosimeter employing two floating gate radiation field effect transistors (FGRADFET) and operating at mere 0.1 V is presented. The novel dosimeter requires no power during irradiation and consumes only 1 μ Wduring readout. Besides the low power operation, structural changes at the device level have enhanced the sensitivity of the dosimeter considerably as compared to previous designs. The dosimeter is integrated with a wireless transmitter chip, thus eliminating all unwanted communication and power cables. It has been realized monolithically in DALSA's 0.8 μ m complementary metal-oxide-semiconductor process and characterized with X-ray and γ-ray sources. A maximum sensitivity of 5 mV/rad for X-rays and 1.1 mV/rad for gamma;-rays have been achieved in measurements. Due to its small size, low-power, and wireless operation, the design is highly suitable for miniaturized, wearable, and battery operated dosimeters intended for radiotherapy and space applications. © 2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectDosimeteren
dc.subjectfloating gate radiation field effect transistors (FGRADFET)en
dc.subjectradiotherapyen
dc.titleUltra low power CMOS-based sensor for on-body radiation dose measurementsen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentIntegrated Microwave Packaging Antennas and Circuits Technology (IMPACT) Laben
dc.identifier.journalIEEE Journal on Emerging and Selected Topics in Circuits and Systemsen
dc.contributor.institutionDepartment of Electronics, Carleton University, Ottawa, ON K1S 5B6, Canadaen
kaust.authorArsalan, Muhammaden
kaust.authorShamim, Atifen
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