Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

Handle URI:
http://hdl.handle.net/10754/562097
Title:
Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device
Authors:
Sun, Jian; Patil, Samadhan B.; Soh, Yeongah; Kose, Jürgen
Abstract:
A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program
Publisher:
IOP Publishing
Journal:
Applied Physics Express
Issue Date:
21-Feb-2012
DOI:
10.1143/APEX.5.033002
Type:
Article
ISSN:
18820778
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorPatil, Samadhan B.en
dc.contributor.authorSoh, Yeongahen
dc.contributor.authorKose, Jürgenen
dc.date.accessioned2015-08-03T09:44:43Zen
dc.date.available2015-08-03T09:44:43Zen
dc.date.issued2012-02-21en
dc.identifier.issn18820778en
dc.identifier.doi10.1143/APEX.5.033002en
dc.identifier.urihttp://hdl.handle.net/10754/562097en
dc.description.abstractA two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.en
dc.publisherIOP Publishingen
dc.titleStrong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact deviceen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalApplied Physics Expressen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
kaust.authorSun, Jianen
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