Anomalous Hall effect in polycrystalline Ni films

Handle URI:
http://hdl.handle.net/10754/562070
Title:
Anomalous Hall effect in polycrystalline Ni films
Authors:
Guo, Zaibing; Mi, Wenbo; Zhang, Qiang; Zhang, Bei; Aboljadayel, Razan; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs
Publisher:
Elsevier BV
Journal:
Solid State Communications
Issue Date:
Feb-2012
DOI:
10.1016/j.ssc.2011.10.039
Type:
Article
ISSN:
00381098
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorMi, Wenboen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorZhang, Beien
dc.contributor.authorAboljadayel, Razanen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T09:44:03Zen
dc.date.available2015-08-03T09:44:03Zen
dc.date.issued2012-02en
dc.identifier.issn00381098en
dc.identifier.doi10.1016/j.ssc.2011.10.039en
dc.identifier.urihttp://hdl.handle.net/10754/562070en
dc.description.abstractWe systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.en
dc.publisherElsevier BVen
dc.subjectA. Magnetic filmsen
dc.subjectD. Anomalous Hall effecten
dc.titleAnomalous Hall effect in polycrystalline Ni filmsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.identifier.journalSolid State Communicationsen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
kaust.authorGuo, Zaibingen
kaust.authorZhang, Qiangen
kaust.authorZhang, Beien
kaust.authorAboljadayel, Razanen
kaust.authorZhang, Xixiangen
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