Doping monolayer graphene with single atom substitutions

Handle URI:
http://hdl.handle.net/10754/562057
Title:
Doping monolayer graphene with single atom substitutions
Authors:
Wang, Hongtao; Wang, Qingxiao; Cheng, Yingchun; Li, Kun; Yao, Yingbang; Zhang, Qiang; Dong, Cezhou; Wang, Pengfei; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Yang, Wei; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs; Computational Physics and Materials Science (CPMS)
Publisher:
American Chemical Society
Journal:
Nano Letters
Issue Date:
11-Jan-2012
DOI:
10.1021/nl2031629
PubMed ID:
22136503
Type:
Article
ISSN:
15306984
Sponsors:
H.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Hongtaoen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorLi, Kunen
dc.contributor.authorYao, Yingbangen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorDong, Cezhouen
dc.contributor.authorWang, Pengfeien
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorYang, Weien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T09:43:45Zen
dc.date.available2015-08-03T09:43:45Zen
dc.date.issued2012-01-11en
dc.identifier.issn15306984en
dc.identifier.pmid22136503en
dc.identifier.doi10.1021/nl2031629en
dc.identifier.urihttp://hdl.handle.net/10754/562057en
dc.description.abstractFunctionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.en
dc.description.sponsorshipH.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).en
dc.publisherAmerican Chemical Societyen
dc.subjectdopingen
dc.subjectGrapheneen
dc.subjectmetal-vacancy complexen
dc.subjecttransmission electron microscopyen
dc.subjectvacancyen
dc.titleDoping monolayer graphene with single atom substitutionsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalNano Lettersen
dc.contributor.institutionInstitute of Applied Mechanics, Zhejiang University, Hangzhou 310027, Chinaen
kaust.authorWang, Qingxiaoen
kaust.authorCheng, Yingchunen
kaust.authorLi, Kunen
kaust.authorYao, Yingbangen
kaust.authorZhang, Qiangen
kaust.authorSchwingenschlögl, Udoen
kaust.authorZhang, Xixiangen
kaust.authorWang, Hongtaoen

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