Ultra-low reflection porous silicon nanowires for solar cell applications

Handle URI:
http://hdl.handle.net/10754/562009
Title:
Ultra-low reflection porous silicon nanowires for solar cell applications
Authors:
Najar, Adel; Charrier, Joël; Pirasteh, Parastesh; Sougrat, Rachid
Abstract:
High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Core Labs; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Optical Society of America
Journal:
Optics Express
Issue Date:
2012
DOI:
10.1364/OE.20.016861
Type:
Article
ISSN:
10944087
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNajar, Adelen
dc.contributor.authorCharrier, Joëlen
dc.contributor.authorPirasteh, Parasteshen
dc.contributor.authorSougrat, Rachiden
dc.date.accessioned2015-08-03T09:36:09Zen
dc.date.available2015-08-03T09:36:09Zen
dc.date.issued2012en
dc.identifier.issn10944087en
dc.identifier.doi10.1364/OE.20.016861en
dc.identifier.urihttp://hdl.handle.net/10754/562009en
dc.description.abstractHigh density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.en
dc.publisherOptical Society of Americaen
dc.titleUltra-low reflection porous silicon nanowires for solar cell applicationsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentCore Labsen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalOptics Expressen
dc.contributor.institutionUniversite Europeenne de Bretagne, CNRS FOTON, UMR 6082, ENSSAT BP80518, F-22305 Lannion Cedex, Franceen
kaust.authorNajar, Adelen
kaust.authorSougrat, Rachiden
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