Spin relaxation in InGaN quantum disks in GaN nanowires

Handle URI:
http://hdl.handle.net/10754/561957
Title:
Spin relaxation in InGaN quantum disks in GaN nanowires
Authors:
Banerjee, Animesh; Dog,; Heo, Junseok; Manchon, Aurelien ( 0000-0002-4768-293X ) ; Guo, Wei; Bhattacharya, Pallab K.
Abstract:
The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Spintronics Theory Group
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
14-Dec-2011
DOI:
10.1021/nl203091f
Type:
Article
ISSN:
15306984
Sponsors:
The work is supported by KAUST under Grant N012509-00.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Spintronics Theory Group; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorBanerjee, Animeshen
dc.contributor.authorDog,en
dc.contributor.authorHeo, Junseoken
dc.contributor.authorManchon, Aurelienen
dc.contributor.authorGuo, Weien
dc.contributor.authorBhattacharya, Pallab K.en
dc.date.accessioned2015-08-03T09:35:00Zen
dc.date.available2015-08-03T09:35:00Zen
dc.date.issued2011-12-14en
dc.identifier.issn15306984en
dc.identifier.doi10.1021/nl203091fen
dc.identifier.urihttp://hdl.handle.net/10754/561957en
dc.description.abstractThe spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.en
dc.description.sponsorshipThe work is supported by KAUST under Grant N012509-00.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectD'yakonov- Perel'en
dc.subjectGaN nanowireen
dc.subjectInGaN quantum disken
dc.subjectquantum disk-in-nanowireen
dc.subjectSpin lifetimeen
dc.subjectTRPLen
dc.titleSpin relaxation in InGaN quantum disks in GaN nanowiresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSpintronics Theory Groupen
dc.identifier.journalNano Lettersen
dc.contributor.institutionCenter for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, United Statesen
kaust.authorManchon, Aurelienen
kaust.authorDog,en
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