Deep energetic trap states in organic photovoltaic devices

Handle URI:
http://hdl.handle.net/10754/561929
Title:
Deep energetic trap states in organic photovoltaic devices
Authors:
Shuttle, Christopher G.; Treat, Neil D.; Douglas, Jessica D.; Frechet, Jean ( 0000-0001-6419-0163 ) ; Chabinyc, Michael L.
Abstract:
The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Chemical Science Program; Physical Sciences and Engineering (PSE) Division
Publisher:
Wiley-Blackwell
Journal:
Advanced Energy Materials
Issue Date:
23-Nov-2011
DOI:
10.1002/aenm.201100541
Type:
Article
ISSN:
16146832
Sponsors:
Work at UCSB was supported as part of the Center for Energy Efficient Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001009 and at UCB by the "Plastics Electronics" program at Lawrence Berkeley National Laboratory funded by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Claudia Piliego and Claire H. Woo for advice about device fabrication with PBDTTPD.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Chemical Science Program

Full metadata record

DC FieldValue Language
dc.contributor.authorShuttle, Christopher G.en
dc.contributor.authorTreat, Neil D.en
dc.contributor.authorDouglas, Jessica D.en
dc.contributor.authorFrechet, Jeanen
dc.contributor.authorChabinyc, Michael L.en
dc.date.accessioned2015-08-03T09:34:20Zen
dc.date.available2015-08-03T09:34:20Zen
dc.date.issued2011-11-23en
dc.identifier.issn16146832en
dc.identifier.doi10.1002/aenm.201100541en
dc.identifier.urihttp://hdl.handle.net/10754/561929en
dc.description.abstractThe nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipWork at UCSB was supported as part of the Center for Energy Efficient Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001009 and at UCB by the "Plastics Electronics" program at Lawrence Berkeley National Laboratory funded by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Claudia Piliego and Claire H. Woo for advice about device fabrication with PBDTTPD.en
dc.publisherWiley-Blackwellen
dc.titleDeep energetic trap states in organic photovoltaic devicesen
dc.typeArticleen
dc.contributor.departmentChemical Science Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Energy Materialsen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106, United Statesen
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United Statesen
dc.contributor.institutionDepartment of Chemistry, University of California, Berkeley, CA 94720-1460, United Statesen
kaust.authorFrechet, Jeanen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.