The origin of the pseudogap in α-Ga

Handle URI:
http://hdl.handle.net/10754/561918
Title:
The origin of the pseudogap in α-Ga
Authors:
Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry. © 2011 IOP Publishing Ltd.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs; Computational Physics and Materials Science (CPMS)
Publisher:
IOP Publishing
Journal:
Journal of Physics: Condensed Matter
Issue Date:
10-Nov-2011
DOI:
10.1088/0953-8984/23/47/475502
Type:
Article
ISSN:
09538984
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhu, Zhiyongen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-03T09:34:05Zen
dc.date.available2015-08-03T09:34:05Zen
dc.date.issued2011-11-10en
dc.identifier.issn09538984en
dc.identifier.doi10.1088/0953-8984/23/47/475502en
dc.identifier.urihttp://hdl.handle.net/10754/561918en
dc.description.abstractDensity functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry. © 2011 IOP Publishing Ltd.en
dc.publisherIOP Publishingen
dc.titleThe origin of the pseudogap in α-Gaen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Physics: Condensed Matteren
kaust.authorZhu, Zhiyongen
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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