Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

Handle URI:
http://hdl.handle.net/10754/561899
Title:
Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits
Authors:
Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
American Chemical Society
Journal:
Nano Letters
Issue Date:
12-Oct-2011
DOI:
10.1021/nl202563s
Type:
Article
ISSN:
15306984
Sponsors:
We deeply appreciate the valuable technical discussion with Professor Frank Register of the University of Texas at Austin, useful logistic support by Kelly Rader, and generous baseline research funding from King Abdullah University of Science and Technology (KAUST).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorSmith, Caseyen
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T09:33:38Zen
dc.date.available2015-08-03T09:33:38Zen
dc.date.issued2011-10-12en
dc.identifier.issn15306984en
dc.identifier.doi10.1021/nl202563sen
dc.identifier.urihttp://hdl.handle.net/10754/561899en
dc.description.abstractWe introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.en
dc.description.sponsorshipWe deeply appreciate the valuable technical discussion with Professor Frank Register of the University of Texas at Austin, useful logistic support by Kelly Rader, and generous baseline research funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Chemical Societyen
dc.subjectdrive currenten
dc.subjectfield effect transistor (FET)en
dc.subjecthigh performanceen
dc.subjectnanotubeen
dc.subjectnanowireen
dc.subjectshortchannel effecten
dc.subjectSiliconen
dc.subjectvolume inversionen
dc.titleSilicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefitsen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalNano Lettersen
kaust.authorFahad, Hossain M.en
kaust.authorSmith, Caseyen
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Muhammad Mustafaen
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