Narrow in-gap states in doped Al2O3

Handle URI:
http://hdl.handle.net/10754/561893
Title:
Narrow in-gap states in doped Al2O3
Authors:
Casas-Cabanas, Montse; Frésard, Marion; Lüders, Ulrike; Frésard, Raymond; Schuster, Cosima B.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)
Publisher:
Elsevier BV
Journal:
Chemical Physics Letters
Issue Date:
Oct-2011
DOI:
10.1016/j.cplett.2011.09.001
Type:
Article
ISSN:
00092614
Sponsors:
We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorCasas-Cabanas, Montseen
dc.contributor.authorFrésard, Marionen
dc.contributor.authorLüders, Ulrikeen
dc.contributor.authorFrésard, Raymonden
dc.contributor.authorSchuster, Cosima B.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-03T09:33:29Zen
dc.date.available2015-08-03T09:33:29Zen
dc.date.issued2011-10en
dc.identifier.issn00092614en
dc.identifier.doi10.1016/j.cplett.2011.09.001en
dc.identifier.urihttp://hdl.handle.net/10754/561893en
dc.description.abstractBased on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipWe thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).en
dc.publisherElsevier BVen
dc.titleNarrow in-gap states in doped Al2O3en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalChemical Physics Lettersen
dc.contributor.institutionLaboratoire CRISMAT, UMR CNRS-ENSICAEN (ISMRA) 6508, IRMA, FR3095 Caen, Franceen
dc.contributor.institutionUniversität Augsburg, Institut für Physik, D-86135 Augsburg, Germanyen
kaust.authorSchwingenschlögl, Udoen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.