Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

Handle URI:
http://hdl.handle.net/10754/561869
Title:
Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts
Authors:
Li, Jingqi; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs
Publisher:
European Physical Society
Journal:
EPL
Issue Date:
1-Sep-2011
DOI:
10.1209/0295-5075/95/68007
Type:
Article
ISSN:
02955075
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Jingqien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T09:32:54Zen
dc.date.available2015-08-03T09:32:54Zen
dc.date.issued2011-09-01en
dc.identifier.issn02955075en
dc.identifier.doi10.1209/0295-5075/95/68007en
dc.identifier.urihttp://hdl.handle.net/10754/561869en
dc.description.abstractThe diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.en
dc.publisherEuropean Physical Societyen
dc.titleSimulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contactsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.identifier.journalEPLen
kaust.authorLi, Jingqien
kaust.authorZhang, Xixiangen
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