Doped silicene: Evidence of a wide stability range

Handle URI:
http://hdl.handle.net/10754/561801
Title:
Doped silicene: Evidence of a wide stability range
Authors:
Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs; Computational Physics and Materials Science (CPMS)
Publisher:
European Physical Society
Journal:
EPL
Issue Date:
17-Jun-2011
DOI:
10.1209/0295-5075/95/17005
Type:
Article
ISSN:
02955075
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorZhu, Zhiyongen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-03T09:04:55Zen
dc.date.available2015-08-03T09:04:55Zen
dc.date.issued2011-06-17en
dc.identifier.issn02955075en
dc.identifier.doi10.1209/0295-5075/95/17005en
dc.identifier.urihttp://hdl.handle.net/10754/561801en
dc.description.abstractThe effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.en
dc.publisherEuropean Physical Societyen
dc.titleDoped silicene: Evidence of a wide stability rangeen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalEPLen
kaust.authorCheng, Yingchunen
kaust.authorZhu, Zhiyongen
kaust.authorSchwingenschlögl, Udoen
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