Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

Handle URI:
http://hdl.handle.net/10754/561743
Title:
Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene
Authors:
Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Mejia, Israel I.; Mao, Duo; Gowrisanker, Srinivas; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Stiegler, Harvey J.; Quevedo-López, Manuel Angel Quevedo; Pieper, Ron J.; Gnade, Bruce E.
Abstract:
The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Elsevier BV
Journal:
Thin Solid Films
Issue Date:
Apr-2011
DOI:
10.1016/j.tsf.2011.02.014
Type:
Article
ISSN:
00406090
Sponsors:
We gratefully acknowledge the Department of Defense for supporting this work (Army Research Office Contract W911NF-07-2-0059).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWondmagegn, Wudyalew T.en
dc.contributor.authorSatyala, Nikhil T.en
dc.contributor.authorMejia, Israel I.en
dc.contributor.authorMao, Duoen
dc.contributor.authorGowrisanker, Srinivasen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorStiegler, Harvey J.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorPieper, Ron J.en
dc.contributor.authorGnade, Bruce E.en
dc.date.accessioned2015-08-03T09:03:36Zen
dc.date.available2015-08-03T09:03:36Zen
dc.date.issued2011-04en
dc.identifier.issn00406090en
dc.identifier.doi10.1016/j.tsf.2011.02.014en
dc.identifier.urihttp://hdl.handle.net/10754/561743en
dc.description.abstractThe capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.en
dc.description.sponsorshipWe gratefully acknowledge the Department of Defense for supporting this work (Army Research Office Contract W911NF-07-2-0059).en
dc.publisherElsevier BVen
dc.subjectCapacitanceen
dc.subjectDefectsen
dc.subjectDispersionen
dc.subjectInterfaceen
dc.subjectPentaceneen
dc.subjectPoole-Frenkelen
dc.titleExperimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/paryleneen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalThin Solid Filmsen
dc.contributor.institutionDepartment of Electrical Engineering, University of Texas at Tyler, Tyler, TX 75799, United Statesen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United Statesen
kaust.authorAlshareef, Husam N.en
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