Ferromagnetism in reactive sputtered Cu0.96Fe 0.04O1-δ nanocrystalline films evidenced by anomalous Hall effect

Handle URI:
http://hdl.handle.net/10754/561732
Title:
Ferromagnetism in reactive sputtered Cu0.96Fe 0.04O1-δ nanocrystalline films evidenced by anomalous Hall effect
Authors:
Mi, Wenbo; Bai, Haili; Zhang, Qiang; Zhang, Bei; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Cu0.96Fe0.04O1-δ nanocrystalline films were fabricated using reactive sputtering at different oxygen partial pressures (PO2). The electrical transport properties of the films were measured in a broad temperature range (10-300 K) under magnetic fields of up to 5T. Anomalous Hall effect (AHE) of up to 0.4μΩ cm was observed at 10 K and decreased to 0.2μΩ cm at 300 K. The characteristic AHE clearly indicated the existence of ferromagnetism in these materials. The AHE weakened as PO2 increased because the increasing PO2 reduced the fraction of Fe2+ ions, and consequently weakened the double exchange coupling between Fe2+-O2--Cu2+ in the materials. © 2011 The Japan Society of Applied Physics.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs
Publisher:
Japan Society of Applied Physics
Journal:
Applied Physics Express
Issue Date:
14-Mar-2011
DOI:
10.1143/APEX.4.043001
Type:
Article
ISSN:
18820778
Sponsors:
This work was supported by the National Natural Science Foundation of China (Nos. 50701033 and 51002104), and the Doctoral Program of Higher Education of China (No. 20070056047), Natural Science Foundation of Tianjin (No. 08JCYBJC09400) and Young Faculty Foundation of Tianjin University (TJU-YFF-08B52 and 08A05).
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorMi, Wenboen
dc.contributor.authorBai, Hailien
dc.contributor.authorZhang, Qiangen
dc.contributor.authorZhang, Beien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T09:03:21Zen
dc.date.available2015-08-03T09:03:21Zen
dc.date.issued2011-03-14en
dc.identifier.issn18820778en
dc.identifier.doi10.1143/APEX.4.043001en
dc.identifier.urihttp://hdl.handle.net/10754/561732en
dc.description.abstractCu0.96Fe0.04O1-δ nanocrystalline films were fabricated using reactive sputtering at different oxygen partial pressures (PO2). The electrical transport properties of the films were measured in a broad temperature range (10-300 K) under magnetic fields of up to 5T. Anomalous Hall effect (AHE) of up to 0.4μΩ cm was observed at 10 K and decreased to 0.2μΩ cm at 300 K. The characteristic AHE clearly indicated the existence of ferromagnetism in these materials. The AHE weakened as PO2 increased because the increasing PO2 reduced the fraction of Fe2+ ions, and consequently weakened the double exchange coupling between Fe2+-O2--Cu2+ in the materials. © 2011 The Japan Society of Applied Physics.en
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (Nos. 50701033 and 51002104), and the Doctoral Program of Higher Education of China (No. 20070056047), Natural Science Foundation of Tianjin (No. 08JCYBJC09400) and Young Faculty Foundation of Tianjin University (TJU-YFF-08B52 and 08A05).en
dc.publisherJapan Society of Applied Physicsen
dc.titleFerromagnetism in reactive sputtered Cu0.96Fe 0.04O1-δ nanocrystalline films evidenced by anomalous Hall effecten
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.identifier.journalApplied Physics Expressen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, Chinaen
kaust.authorZhang, Qiangen
kaust.authorZhang, Beien
kaust.authorZhang, Xixiangen
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