Cr-doped III-V nitrides: Potential candidates for spintronics

Handle URI:
http://hdl.handle.net/10754/561717
Title:
Cr-doped III-V nitrides: Potential candidates for spintronics
Authors:
Amin, Bin ( 0000-0003-1284-1934 ) ; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.
Abstract:
Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Publisher:
Springer Nature
Journal:
Journal of Electronic Materials
Issue Date:
19-Feb-2011
DOI:
10.1007/s11664-011-1539-7
ARXIV:
arXiv:1101.4059
Type:
Article
ISSN:
03615235
Additional Links:
http://arxiv.org/abs/arXiv:1101.4059v1
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAmin, Binen
dc.contributor.authorArif, Suneela K.en
dc.contributor.authorAhmad, Iftikharen
dc.contributor.authorMaqbool, Muhammaden
dc.contributor.authorAhmad, Roshanen
dc.contributor.authorGoumri-Said, Sourayaen
dc.contributor.authorPrisbrey, Keith A.en
dc.date.accessioned2015-08-03T09:03:01Zen
dc.date.available2015-08-03T09:03:01Zen
dc.date.issued2011-02-19en
dc.identifier.issn03615235en
dc.identifier.doi10.1007/s11664-011-1539-7en
dc.identifier.urihttp://hdl.handle.net/10754/561717en
dc.description.abstractStudies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.en
dc.publisherSpringer Natureen
dc.relation.urlhttp://arxiv.org/abs/arXiv:1101.4059v1en
dc.subjectCr-doped III-V nitridesen
dc.subjectDFTen
dc.subjectdilute magnetic alloysen
dc.subjectDMSen
dc.subjecthalf-metalsen
dc.subjectSpintronicsen
dc.titleCr-doped III-V nitrides: Potential candidates for spintronicsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Electronic Materialsen
dc.contributor.institutionMaterials Modeling Laboratory, Department of Physics, Hazara University, Mansehra, Pakistanen
dc.contributor.institutionDepartment of Physics and Astronomy, Ball State University, Muncie, IN, United Statesen
dc.contributor.institutionDepartment of Chemistry, Hazara University, Mansehra, Pakistanen
dc.contributor.institutionDepartment of Metallurgy, University of Utah, Salt Lake City, UT, United Statesen
dc.identifier.arxividarXiv:1101.4059en
kaust.authorGoumri-Said, Sourayaen
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