Contact materials for nanoelectronics

Handle URI:
http://hdl.handle.net/10754/561712
Title:
Contact materials for nanoelectronics
Authors:
Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Quevedo-López, Manuel Angel Quevedo; Majhi, Prashant
Abstract:
In this article, we review current research activities in contact material development for electronic and nanoelectronic devices. A fundamental issue in contact materials research is to understand and control interfacial reactions and phenomena that modify the expected device performance. These reactions have become more challenging and more difficult to control as new materials have been introduced and as device sizes have entered the deep nanoscale. To provide an overview of this field of inquiry, this issue of MRS Bulletin includes articles on gate and contact materials for Si-based devices, junction contact materials for Si-based devices, and contact materials for alternate channel substrates (Ge and III-V), nanodevices. © 2011 Materials Research Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Functional Nanomaterials and Devices Research Group
Publisher:
Cambridge University Press (CUP)
Journal:
MRS Bulletin
Issue Date:
Feb-2011
DOI:
10.1557/mrs.2011.9
Type:
Article
ISSN:
08837694
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorMajhi, Prashanten
dc.date.accessioned2015-08-03T09:02:54Zen
dc.date.available2015-08-03T09:02:54Zen
dc.date.issued2011-02en
dc.identifier.issn08837694en
dc.identifier.doi10.1557/mrs.2011.9en
dc.identifier.urihttp://hdl.handle.net/10754/561712en
dc.description.abstractIn this article, we review current research activities in contact material development for electronic and nanoelectronic devices. A fundamental issue in contact materials research is to understand and control interfacial reactions and phenomena that modify the expected device performance. These reactions have become more challenging and more difficult to control as new materials have been introduced and as device sizes have entered the deep nanoscale. To provide an overview of this field of inquiry, this issue of MRS Bulletin includes articles on gate and contact materials for Si-based devices, junction contact materials for Si-based devices, and contact materials for alternate channel substrates (Ge and III-V), nanodevices. © 2011 Materials Research Society.en
dc.publisherCambridge University Press (CUP)en
dc.titleContact materials for nanoelectronicsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalMRS Bulletinen
dc.contributor.institutionUniversity of Texas, Dallas, United Statesen
dc.contributor.institutionSEMATECH, United Statesen
kaust.authorAlshareef, Husam N.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.