Improved performance of UV-LED by p-AlGaN with graded composition

Handle URI:
http://hdl.handle.net/10754/561631
Title:
Improved performance of UV-LED by p-AlGaN with graded composition
Authors:
Yan, Jianchang; Wang, Junxi; Cong, Peipei; Sun, Lili; Liu, Naixin; Liu, Zhe; Zhao, Chao ( 0000-0002-9582-1068 ) ; Li, Jinmin
Abstract:
AlGaN-based ultraviolet light emitting diodes (UV-LEDs) on AlN/sapphire template were grown by metal organic chemical vapour deposition. The AlN template was characterized by atomic force microscopy and high resolution X-ray diffraction. Atomic force microscopy image shows that the AlN surface is very flat, while high resolution X-ray diffraction results prove the good crystalline quality of the AlN template. A novel structure UV-LED which has several p-AlGaN layers with graded composition is compared with a common structure UV-LED which has a single p-Al0.5Ga0.5N layer. The forward bias voltage at 20 mA driving current for the novel structure UV-LED is nearly 3 V higher than that of the common structure UV-LED, however, the electroluminescence intensity of the former is over two times higher than that of the latter. The total quantum efficiency of the novel structure UV-LED is more than 50% higher than that of the common structure UV-LED. The improvement is considered to be the result of better holes injection efficiency in the novel structure UV-LED. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (c)
Issue Date:
2-Nov-2010
DOI:
10.1002/pssc.201000458
Type:
Article
ISSN:
18626351
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorYan, Jianchangen
dc.contributor.authorWang, Junxien
dc.contributor.authorCong, Peipeien
dc.contributor.authorSun, Lilien
dc.contributor.authorLiu, Naixinen
dc.contributor.authorLiu, Zheen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorLi, Jinminen
dc.date.accessioned2015-08-03T09:00:51Zen
dc.date.available2015-08-03T09:00:51Zen
dc.date.issued2010-11-02en
dc.identifier.issn18626351en
dc.identifier.doi10.1002/pssc.201000458en
dc.identifier.urihttp://hdl.handle.net/10754/561631en
dc.description.abstractAlGaN-based ultraviolet light emitting diodes (UV-LEDs) on AlN/sapphire template were grown by metal organic chemical vapour deposition. The AlN template was characterized by atomic force microscopy and high resolution X-ray diffraction. Atomic force microscopy image shows that the AlN surface is very flat, while high resolution X-ray diffraction results prove the good crystalline quality of the AlN template. A novel structure UV-LED which has several p-AlGaN layers with graded composition is compared with a common structure UV-LED which has a single p-Al0.5Ga0.5N layer. The forward bias voltage at 20 mA driving current for the novel structure UV-LED is nearly 3 V higher than that of the common structure UV-LED, however, the electroluminescence intensity of the former is over two times higher than that of the latter. The total quantum efficiency of the novel structure UV-LED is more than 50% higher than that of the common structure UV-LED. The improvement is considered to be the result of better holes injection efficiency in the novel structure UV-LED. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWiley-Blackwellen
dc.subjectAlGaNen
dc.subjectElectroluminescenceen
dc.subjectGraded compositionen
dc.subjectUV-LEDen
dc.titleImproved performance of UV-LED by p-AlGaN with graded compositionen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalphysica status solidi (c)en
dc.contributor.institutionSemiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, Chinaen
kaust.authorZhao, Chaoen
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