Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

Handle URI:
http://hdl.handle.net/10754/561627
Title:
Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors
Authors:
Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Pieper, Ron J.; Quevedo-López, Manuel Angel Quevedo; Gowrisanker, Srinivas; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Stiegler, Harvey J.; Gnade, Bruce E.
Abstract:
The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Springer Verlag
Journal:
Journal of Computational Electronics
Issue Date:
24-Sep-2010
DOI:
10.1007/s10825-010-0311-1
Type:
Article
ISSN:
15698025
Sponsors:
We gratefully acknowledge the Department of Defense for supporting this work (Army Research Office Contract W911NF-07-2-0059).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWondmagegn, Wudyalew T.en
dc.contributor.authorSatyala, Nikhil T.en
dc.contributor.authorPieper, Ron J.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorGowrisanker, Srinivasen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorStiegler, Harvey J.en
dc.contributor.authorGnade, Bruce E.en
dc.date.accessioned2015-08-03T09:00:44Zen
dc.date.available2015-08-03T09:00:44Zen
dc.date.issued2010-09-24en
dc.identifier.issn15698025en
dc.identifier.doi10.1007/s10825-010-0311-1en
dc.identifier.urihttp://hdl.handle.net/10754/561627en
dc.description.abstractThe contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.en
dc.description.sponsorshipWe gratefully acknowledge the Department of Defense for supporting this work (Army Research Office Contract W911NF-07-2-0059).en
dc.publisherSpringer Verlagen
dc.subjectContact resistanceen
dc.subjectField effect mobilityen
dc.subjectInterface dipoleen
dc.subjectOrganic thinfilm transistoren
dc.subjectPentaceneen
dc.subjectPoole-Frenkel mechanismen
dc.subjectSwitching speeden
dc.titleImpact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistorsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalJournal of Computational Electronicsen
dc.contributor.institutionDepartment of Electrical Engineering, University of Texas at Tyler, Tyler, TX 75799, United Statesen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080-3021, United Statesen
kaust.authorAlshareef, Husam N.en
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