The dynamic characteristics and linewidth enhancement factor of quasi-supercontinuum self-assembled quantum dot lasers

Handle URI:
http://hdl.handle.net/10754/561617
Title:
The dynamic characteristics and linewidth enhancement factor of quasi-supercontinuum self-assembled quantum dot lasers
Authors:
Tan, Cheeloon; Wang, Yang; Djie, Hery Susanto; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers (α ∼ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain (∼ 10-16 cm2) and material differential refractive index (∼ 10sup>-20 cm3 ) near current threshold. © 2009 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Journal of Quantum Electronics
Issue Date:
Sep-2009
DOI:
10.1109/JQE.2009.2020813
Type:
Article
ISSN:
00189197
Sponsors:
This work was supported in part by the National Science Foundation (NSF) under Grant 0725647, U. S. Army Research Laboratory, Commonwealth of Pennsylvania, Department of Community and Economic Development.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTan, Cheeloonen
dc.contributor.authorWang, Yangen
dc.contributor.authorDjie, Hery Susantoen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-03T09:00:20Zen
dc.date.available2015-08-03T09:00:20Zen
dc.date.issued2009-09en
dc.identifier.issn00189197en
dc.identifier.doi10.1109/JQE.2009.2020813en
dc.identifier.urihttp://hdl.handle.net/10754/561617en
dc.description.abstractThe theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers (α ∼ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain (∼ 10-16 cm2) and material differential refractive index (∼ 10sup>-20 cm3 ) near current threshold. © 2009 IEEE.en
dc.description.sponsorshipThis work was supported in part by the National Science Foundation (NSF) under Grant 0725647, U. S. Army Research Laboratory, Commonwealth of Pennsylvania, Department of Community and Economic Development.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.titleThe dynamic characteristics and linewidth enhancement factor of quasi-supercontinuum self-assembled quantum dot lasersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Journal of Quantum Electronicsen
dc.contributor.institutionCenter for Optical Technologies and Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionOptiComp Corp., Zephyr Cove, NV 89448, United Statesen
dc.contributor.institutionJDS Uniphase Corp., San Jose, CA 95134, United Statesen
dc.contributor.institutionCenter for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United Statesen
kaust.authorOoi, Boon S.en
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