The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers

Handle URI:
http://hdl.handle.net/10754/561616
Title:
The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers
Authors:
Tan, Cheeloon; Wang, Yang; Djie, Hery Susanto; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Journal of Quantum Electronics
Issue Date:
Sep-2009
DOI:
10.1109/JQE.2009.2020055
Type:
Article
ISSN:
00189197
Sponsors:
This work was supported in part by the National Science Foundation (NSF) under Grant 0725647, U.S. Army Research Laboratory, Commonwealth of Pennsylvania, Department of Community and Economic Development.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTan, Cheeloonen
dc.contributor.authorWang, Yangen
dc.contributor.authorDjie, Hery Susantoen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-03T09:00:18Zen
dc.date.available2015-08-03T09:00:18Zen
dc.date.issued2009-09en
dc.identifier.issn00189197en
dc.identifier.doi10.1109/JQE.2009.2020055en
dc.identifier.urihttp://hdl.handle.net/10754/561616en
dc.description.abstractThis paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.en
dc.description.sponsorshipThis work was supported in part by the National Science Foundation (NSF) under Grant 0725647, U.S. Army Research Laboratory, Commonwealth of Pennsylvania, Department of Community and Economic Development.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectBroadband laseren
dc.subjectHomogeneous broadeningen
dc.subjectInhomogeneous broadeningen
dc.subjectOptical gain broadeningen
dc.subjectSelf-assembled quantum doten
dc.subjectSemiconductor laseren
dc.subjectSupercontinuumen
dc.titleThe spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Journal of Quantum Electronicsen
dc.contributor.institutionCenter for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionOpticomp Corporation, Zephyr Cove, NV 89448-2779, United Statesen
dc.contributor.institutionJDS Uniphase Corporation, San Jose, CA 95134, United Statesen
kaust.authorOoi, Boon S.en
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