Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

Handle URI:
http://hdl.handle.net/10754/561593
Title:
Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks
Authors:
Fuentes-Fernandez, E. M A; Debray-Mechtaly, W.; Quevedo-López, Manuel Angel Quevedo; Gnade, Bruce E.; Rajasekaran, Arvindh; Hande, Abhiman; Shah, Pradeep; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Functional Nanomaterials and Devices Research Group
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
Journal of Electronic Materials
Issue Date:
18-Nov-2010
DOI:
10.1007/s11664-010-1407-x
Type:
Article
ISSN:
03615235
Sponsors:
The authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorFuentes-Fernandez, E. M Aen
dc.contributor.authorDebray-Mechtaly, W.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorGnade, Bruce E.en
dc.contributor.authorRajasekaran, Arvindhen
dc.contributor.authorHande, Abhimanen
dc.contributor.authorShah, Pradeepen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-02T09:14:57Zen
dc.date.available2015-08-02T09:14:57Zen
dc.date.issued2010-11-18en
dc.identifier.issn03615235en
dc.identifier.doi10.1007/s11664-010-1407-xen
dc.identifier.urihttp://hdl.handle.net/10754/561593en
dc.description.abstract0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.en
dc.description.sponsorshipThe authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectcantileveren
dc.subjectintegrationen
dc.subjectperovskiteen
dc.subjectPiezoelectric materialen
dc.subjectPZT-PZNen
dc.subjectrelaxoren
dc.titleFabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacksen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalJournal of Electronic Materialsen
dc.contributor.institutionUniversity of Texas at Dallas, 800 W. Campbell Rd., Richardson, TX 75080, United Statesen
dc.contributor.institutionTexas Micro Power Inc., 7920 Beltline Rd., Dallas, TX 75254, United Statesen
kaust.authorAlshareef, Husam N.en
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