Fundamental and dynamic properties of intermixed InGaAs-InGaAsP quantum-well lasers

Handle URI:
http://hdl.handle.net/10754/561503
Title:
Fundamental and dynamic properties of intermixed InGaAs-InGaAsP quantum-well lasers
Authors:
Chen, Cheng; Djie, Hery Susanto; Ding, Yunhsiang; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Hwang, James; Aimez, Vincent
Abstract:
The fundamental and dynamic properties of InGaAs-InGaAsP lasers, where emission wavelengths were blue-shifted by quantum-well intermixing through ion implantation and annealing, were investigated to assess possible degradation by intermixing. It was found that the fundamental properties such as threshold current and slope efficiency were largely unchanged even after as much as 120 nm of wavelength shift. Meanwhile, the dynamic properties such as modulation efficiency and K factor were degraded after just a moderate degree of intermixing, but the degradation was not worsened by further intermixing. Provided the finite degradation of dynamic properties is tolerable, the present intermixing technique will be very useful for the fabrication of photonic integrated circuits. © 2006 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Journal of Quantum Electronics
Issue Date:
Sep-2010
DOI:
10.1109/JQE.2010.2047939
Type:
Article
ISSN:
00189197
Sponsors:
Manuscript received February 18, 2010; revised March 28, 2010; accepted April 4, 2010. Date of current version July 23, 2010. This work was supported in part by the U.S. National Science Foundation, under Grant 0725647US, and the U.S. Army Research Laboratory, under Cooperative Agreement No. W911NF-07-2-0064. This paper was recommended by Associate Editor L.J. Mawst.
Appears in Collections:
Articles; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Chengen
dc.contributor.authorDjie, Hery Susantoen
dc.contributor.authorDing, Yunhsiangen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorHwang, Jamesen
dc.contributor.authorAimez, Vincenten
dc.date.accessioned2015-08-02T09:12:57Zen
dc.date.available2015-08-02T09:12:57Zen
dc.date.issued2010-09en
dc.identifier.issn00189197en
dc.identifier.doi10.1109/JQE.2010.2047939en
dc.identifier.urihttp://hdl.handle.net/10754/561503en
dc.description.abstractThe fundamental and dynamic properties of InGaAs-InGaAsP lasers, where emission wavelengths were blue-shifted by quantum-well intermixing through ion implantation and annealing, were investigated to assess possible degradation by intermixing. It was found that the fundamental properties such as threshold current and slope efficiency were largely unchanged even after as much as 120 nm of wavelength shift. Meanwhile, the dynamic properties such as modulation efficiency and K factor were degraded after just a moderate degree of intermixing, but the degradation was not worsened by further intermixing. Provided the finite degradation of dynamic properties is tolerable, the present intermixing technique will be very useful for the fabrication of photonic integrated circuits. © 2006 IEEE.en
dc.description.sponsorshipManuscript received February 18, 2010; revised March 28, 2010; accepted April 4, 2010. Date of current version July 23, 2010. This work was supported in part by the U.S. National Science Foundation, under Grant 0725647US, and the U.S. Army Research Laboratory, under Cooperative Agreement No. W911NF-07-2-0064. This paper was recommended by Associate Editor L.J. Mawst.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectDynamic responseen
dc.subjectgain measurementen
dc.subjection implantationen
dc.subjectoptical modulationen
dc.subjectquantum wellsen
dc.subjectsemiconductor lasersen
dc.titleFundamental and dynamic properties of intermixed InGaAs-InGaAsP quantum-well lasersen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Journal of Quantum Electronicsen
dc.contributor.institutionLehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionJDS Uniphase Corporation, San Jose, CA 95134, United Statesen
dc.contributor.institutionCenter de Recherche en Nanofabrication et en Nanocaractérisation, University of Sherbrooke, Sherbrooke, QC J1K 2R1, Canadaen
kaust.authorOoi, Boon S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.