Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

Handle URI:
http://hdl.handle.net/10754/561491
Title:
Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions
Authors:
Useinov, Arthur; Deminov, R. G.; Useinov, Niazbeck Kh H; Tagirov, Lenar R.
Abstract:
We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (b)
Issue Date:
3-May-2010
DOI:
10.1002/pssb.200945565
Type:
Article
ISSN:
03701972
Sponsors:
This work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorUseinov, Arthuren
dc.contributor.authorDeminov, R. G.en
dc.contributor.authorUseinov, Niazbeck Kh Hen
dc.contributor.authorTagirov, Lenar R.en
dc.date.accessioned2015-08-02T09:12:40Zen
dc.date.available2015-08-02T09:12:40Zen
dc.date.issued2010-05-03en
dc.identifier.issn03701972en
dc.identifier.doi10.1002/pssb.200945565en
dc.identifier.urihttp://hdl.handle.net/10754/561491en
dc.description.abstractWe present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThis work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.en
dc.publisherWiley-Blackwellen
dc.subjectMagnetoresistanceen
dc.subjectSpin polarized transporten
dc.subjectTunnelingen
dc.titleTunneling magnetoresistance in ferromagnetic planar hetero-nanojunctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalphysica status solidi (b)en
dc.contributor.institutionKazan State University, 420008 Kazan, Russian Federationen
kaust.authorUseinov, Arthuren
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