Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

Handle URI:
http://hdl.handle.net/10754/561465
Title:
Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
Authors:
Mao, Duo; Quevedo-López, Manuel Angel Quevedo; Stiegler, Harvey J.; Gnade, Bruce E.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Elsevier BV
Journal:
Organic Electronics
Issue Date:
May-2010
DOI:
10.1016/j.orgel.2010.02.012
Type:
Article
ISSN:
15661199
Sponsors:
The authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorMao, Duoen
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorStiegler, Harvey J.en
dc.contributor.authorGnade, Bruce E.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-02T09:12:03Zen
dc.date.available2015-08-02T09:12:03Zen
dc.date.issued2010-05en
dc.identifier.issn15661199en
dc.identifier.doi10.1016/j.orgel.2010.02.012en
dc.identifier.urihttp://hdl.handle.net/10754/561465en
dc.description.abstractThe impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.en
dc.description.sponsorshipThe authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.en
dc.publisherElsevier BVen
dc.subjectFerroelectric polymeren
dc.subjectFlexible electronicsen
dc.subjectNon-volatile memoryen
dc.subjectP(VDF-TrFE)en
dc.titleOptimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronicsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalOrganic Electronicsen
dc.contributor.institutionDepartment of Material Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, United Statesen
kaust.authorAlshareef, Husam N.en
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