Vacancy-indium clusters in implanted germanium

Handle URI:
http://hdl.handle.net/10754/561463
Title:
Vacancy-indium clusters in implanted germanium
Authors:
Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)
Publisher:
Elsevier
Journal:
Chemical Physics Letters
Issue Date:
Apr-2010
DOI:
10.1016/j.cplett.2010.03.005
Type:
Article
ISSN:
00092614
Sponsors:
Computing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorChroneos, Alexander I.en
dc.contributor.authorKube, R.en
dc.contributor.authorBracht, Hartmut A.en
dc.contributor.authorGrimes, Robin W.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-02T09:12:00Zen
dc.date.available2015-08-02T09:12:00Zen
dc.date.issued2010-04en
dc.identifier.issn00092614en
dc.identifier.doi10.1016/j.cplett.2010.03.005en
dc.identifier.urihttp://hdl.handle.net/10754/561463en
dc.description.abstractSecondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipComputing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.en
dc.publisherElsevieren
dc.titleVacancy-indium clusters in implanted germaniumen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalChemical Physics Lettersen
dc.contributor.institutionDepartment of Materials, Imperial College London, London, SW7 2BP, United Kingdomen
dc.contributor.institutionInstitute of Material Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germanyen
kaust.authorSchwingenschlögl, Udoen
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