Solvent vapor annealing of an insoluble molecular semiconductor

Handle URI:
http://hdl.handle.net/10754/561458
Title:
Solvent vapor annealing of an insoluble molecular semiconductor
Authors:
Amassian, Aram ( 0000-0002-5734-1194 ) ; Pozdin, Vladimir A.; Li, Ruipeng; Smilgies, Detlef Matthias; Malliaras, George G.
Abstract:
Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Organic Electronics and Photovoltaics Group
Publisher:
Royal Society of Chemistry
Journal:
Journal of Materials Chemistry
Issue Date:
2010
DOI:
10.1039/b923375j
Type:
Article
ISSN:
09599428
Sponsors:
The authors would like to thank Dr Jim Elman from FilMetrics, Inc. for helpful discussions and the J. A. Woollam Co., Inc. for providing a copy of the WVASE32 software. This work was supported by the Cornell Center for Materials Research, a National Science Foundation Materials Research Science and Engineering Center (NSF DMR-0520404), and was performed in part at the Cornell High Energy Synchrotron Source, also supported by the National Science Foundation and NIH-NIGMS (NSF DMR-0225180). Part of this work was also performed at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant ECS 03-35765). One of us (V. P.) would like to acknowledge the National Science Foundation for a graduate fellowship.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorAmassian, Aramen
dc.contributor.authorPozdin, Vladimir A.en
dc.contributor.authorLi, Ruipengen
dc.contributor.authorSmilgies, Detlef Matthiasen
dc.contributor.authorMalliaras, George G.en
dc.date.accessioned2015-08-02T09:11:53Zen
dc.date.available2015-08-02T09:11:53Zen
dc.date.issued2010en
dc.identifier.issn09599428en
dc.identifier.doi10.1039/b923375jen
dc.identifier.urihttp://hdl.handle.net/10754/561458en
dc.description.abstractSolvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.en
dc.description.sponsorshipThe authors would like to thank Dr Jim Elman from FilMetrics, Inc. for helpful discussions and the J. A. Woollam Co., Inc. for providing a copy of the WVASE32 software. This work was supported by the Cornell Center for Materials Research, a National Science Foundation Materials Research Science and Engineering Center (NSF DMR-0520404), and was performed in part at the Cornell High Energy Synchrotron Source, also supported by the National Science Foundation and NIH-NIGMS (NSF DMR-0225180). Part of this work was also performed at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant ECS 03-35765). One of us (V. P.) would like to acknowledge the National Science Foundation for a graduate fellowship.en
dc.publisherRoyal Society of Chemistryen
dc.titleSolvent vapor annealing of an insoluble molecular semiconductoren
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalJournal of Materials Chemistryen
dc.contributor.institutionMaterials Science and Engineering, Cornell University, Ithaca NY 14853, United Statesen
dc.contributor.institutionCornell High Energy Synchrotron Source, Cornell University, Ithaca NY 14853, United Statesen
kaust.authorAmassian, Aramen
kaust.authorLi, Ruipengen
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