Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

Handle URI:
http://hdl.handle.net/10754/561454
Title:
Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering
Authors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao
Abstract:
Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.
KAUST Department:
Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Integrated Nanotechnology Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Electron Devices
Issue Date:
Mar-2010
DOI:
10.1109/TED.2009.2039097
Type:
Article
ISSN:
00189383
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorSmith, Casey Ebenen
dc.contributor.authorHarris, Harlan Rustyen
dc.contributor.authorYoung, Chadwinen
dc.contributor.authorTseng, Hsinghuangen
dc.contributor.authorJammy, Rajaraoen
dc.date.accessioned2015-08-02T09:11:46Zen
dc.date.available2015-08-02T09:11:46Zen
dc.date.issued2010-03en
dc.identifier.issn00189383en
dc.identifier.doi10.1109/TED.2009.2039097en
dc.identifier.urihttp://hdl.handle.net/10754/561454en
dc.description.abstractGate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectFinFETen
dc.subjectGate-first integrationen
dc.subjectHigh- k/metal gates stacken
dc.subjectTunable work function (TWF)en
dc.titleGate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineeringen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalIEEE Transactions on Electron Devicesen
dc.contributor.institutionSEMATECH, Inc., Austin, TX 78741, United Statesen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Texas A and M University, College Station, TX 77843, United Statesen
dc.contributor.institutionTexas State University, San Marcos, TX 78666, United Statesen
kaust.authorHussain, Muhammad Mustafaen
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