Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

Handle URI:
http://hdl.handle.net/10754/561448
Title:
Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series
Authors:
Elkhatib, Tamer A.; Kachorovskiǐ, Valentin Yu; Stillman, William J.; Veksler, Dmitry B.; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Zhang, Xicheng; Shur, Michael S.
Abstract:
We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.
KAUST Department:
Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Transactions on Microwave Theory and Techniques
Issue Date:
Feb-2010
DOI:
10.1109/TMTT.2009.2037872
Type:
Article
ISSN:
00189480
Appears in Collections:
Articles; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElkhatib, Tamer A.en
dc.contributor.authorKachorovskiǐ, Valentin Yuen
dc.contributor.authorStillman, William J.en
dc.contributor.authorVeksler, Dmitry B.en
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorZhang, Xichengen
dc.contributor.authorShur, Michael S.en
dc.date.accessioned2015-08-02T09:11:35Zen
dc.date.available2015-08-02T09:11:35Zen
dc.date.issued2010-02en
dc.identifier.issn00189480en
dc.identifier.doi10.1109/TMTT.2009.2037872en
dc.identifier.urihttp://hdl.handle.net/10754/561448en
dc.description.abstractWe report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectHigh electron-mobility transistors (HEMTs)en
dc.subjectNonresonant detectionen
dc.subjectPlasma wavesen
dc.subjectRoom temperatureen
dc.subjectSeries-connected transistorsen
dc.subjectTerahertzen
dc.titleEnhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in seriesen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalIEEE Transactions on Microwave Theory and Techniquesen
dc.contributor.institutionDepartment of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, United Statesen
dc.contributor.institutionDepartment of the Theory of Electrical and Optical Phenomena in Semiconductors, Ioffe Physical-Technical Institute, St. Petersburg 194021, Russian Federationen
dc.contributor.institutionElectrical and Physical Characterization Group, SEMATECH Inc., Albany, NY 12203, United Statesen
kaust.authorSalama, Khaled N.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.