Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Handle URI:
http://hdl.handle.net/10754/561182
Title:
Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.
KAUST Department:
Integrated Nanotechnology Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics 2015, 4 (3):424 Electronics
Journal:
Electronics
Issue Date:
23-Jul-2015
DOI:
10.3390/electronics4030424
Type:
Article
ISSN:
2079-9292
Additional Links:
http://www.mdpi.com/2079-9292/4/3/424/
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-07-28T12:56:05Zen
dc.date.available2015-07-28T12:56:05Zen
dc.date.issued2015-07-23en
dc.identifier.citationReview on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics 2015, 4 (3):424 Electronicsen
dc.identifier.issn2079-9292en
dc.identifier.doi10.3390/electronics4030424en
dc.identifier.urihttp://hdl.handle.net/10754/561182en
dc.description.abstractSolid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.en
dc.relation.urlhttp://www.mdpi.com/2079-9292/4/3/424/en
dc.rightsThis article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).en
dc.subjectflexible electronicsen
dc.subjectsiliconen
dc.subjectnonvolatile memoryen
dc.subjectferroelectricen
dc.subjectmemristoren
dc.subjectresistiveen
dc.subjectflashen
dc.subjectphase change memoryen
dc.subjectrandom access memory (RAM)en
dc.subjecttransistoren
dc.subjectCMOSen
dc.subjectinorganicen
dc.subjectreliabilityen
dc.titleReview on Physically Flexible Nonvolatile Memory for Internet of Everything Electronicsen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalElectronicsen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Muhammad Mustafaen
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