An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

Handle URI:
http://hdl.handle.net/10754/561164
Title:
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
Authors:
Zhao, Chao ( 0000-0002-9582-1068 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Prabaswara, Aditya ( 0000-0003-1892-671X ) ; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D.; Parbrook, Peter; Bhattacharya, Pallab; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We present a detailed study on the effects of dangling bond passivation and the comparison of different sulfides passivation process on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency, and higher peak efficiency. Our results highlighted the research opportunity in employing this technique for further design and realization of high performance NW-LEDs and NW-lasers.
KAUST Department:
Photonics Laboratory; Imaging and Characterization Core Lab
Citation:
Chao Zhao, Tien Khee Ng, Aditya Prabaswara, M. Conroy, S. Jahangir, T. Frost, J. O'Connell, J. D. Holmes, P. Parbrook, P. Bhattacharya and B. S. Ooi, "An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination", Nanoscale, (2015).
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale
Issue Date:
24-Jul-2015
DOI:
10.1039/C5NR03448E
Type:
Article
ISSN:
2040-3364; 2040-3372
Sponsors:
The work is supported by KAUST Competitive Research Grant and baseline funding.
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR03448E
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorConroy, Micheleen
dc.contributor.authorJahangir, Shafaten
dc.contributor.authorFrost, Thomasen
dc.contributor.authorO'Connell, Johnen
dc.contributor.authorHolmes, Justin D.en
dc.contributor.authorParbrook, Peteren
dc.contributor.authorBhattacharya, Pallaben
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-07-28T09:41:36Zen
dc.date.available2015-07-28T09:41:36Zen
dc.date.issued2015-07-24en
dc.identifier.citationChao Zhao, Tien Khee Ng, Aditya Prabaswara, M. Conroy, S. Jahangir, T. Frost, J. O'Connell, J. D. Holmes, P. Parbrook, P. Bhattacharya and B. S. Ooi, "An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination", Nanoscale, (2015).en
dc.identifier.issn2040-3364en
dc.identifier.issn2040-3372en
dc.identifier.doi10.1039/C5NR03448Een
dc.identifier.urihttp://hdl.handle.net/10754/561164en
dc.description.abstractWe present a detailed study on the effects of dangling bond passivation and the comparison of different sulfides passivation process on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency, and higher peak efficiency. Our results highlighted the research opportunity in employing this technique for further design and realization of high performance NW-LEDs and NW-lasers.en
dc.description.sponsorshipThe work is supported by KAUST Competitive Research Grant and baseline funding.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR03448Een
dc.rightsThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleAn enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombinationen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalNanoscaleen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTyndall National Institute, University College Cork, Lee Maltings, Dykeen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, Universityen
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